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留学生电子工业论文定制:Electronics Industry

论文作者:留学生论文代写论文属性:硕士毕业论文 thesis登出时间:2011-06-08编辑:zn1987点击率:2334

论文字数:2007论文编号:org201106081523281489语种:英语 English地区:美国价格:$ 66

关键词:Electronics IndustryMgOElectron emission

Characteristics of MgO layer Deposited under Hydrogen Atmosphere

Abstract
Characteristics of MgO layer deposited under hydrogenatmosphere were investigated.英语论文代写 Hydrogen gas was introducedduring e-beam evaporation coating process of MgO layer and itseffects on microstructure, cathode luminescence spectra,discharge voltages and effective yield of secondary electronemission were examined. The results indicated that the hydrogeninfluences the concentration and energy levels of defects in MgOlayer and that affects the luminance efficiency and dischargedelays of the panels significantly.

1.Introduction
MgO layer formed on transparent dielectric layer of ac-PDPs affects the discharge voltage and protects dielectriclayer from ion bombardments. As the MgO has a rarecombination of high coefficient of secondary electronemission and resistance for ion sputtering, it has beenmainly used as electron emission/protective layer for PDPs.For further enhancement in luminance efficacy andreduction of firing voltages of PDPs, electron emissioncharacterization such as secondary electron and exoelectronemission from MgO must be improved further.

There have been various attempts to increase thecoefficient of secondary electron emission of MgO, whichinclude doping of MgO material [1], patterning of the layer[2], and controlling of orientation of MgO layer [3], etc.These approaches, however, have resulted in a marginalimprovement of such characteristics. Recently, Okada et. al.[4], has reported that addition of hydrogen in discharge gasreduces the discharge voltages and aging time. In addition,increase in photoelectron emission was reported with theaddition of hydrogen.

6. References
[1] Rak-hwan Kim, Younghyun Kim, Jong-Wan Park,Thin Solid Films 376 (2000) 183-187.
[2] J.S. Oh, J.Y. Lim, H.S. Jeong., J.W. Cho, Kang andE.H. Choi , IDW`02 digest, pp.785-788 (2002).
[3] M. Ishimoto, S. Hikada, K. Betsui, K Shinoda, SID`99Digest P-25. (1999).
[4] T. Okada and T. Komaki, SID Digest of TechnicalPapers, v.36 no.2, 2005, pp.1245-1247.
[5] R.I. Eglitis, A.I. Popov et all. "Semi-empiricalsimulations of the electron centers in MgO crystal"Computational Materials Science 5 (1996) 298-306
[6] Y. Motoyama, Y. Hirano, K. Ishii, Y. Murakami, and F.Sato, J. of Appl. Phys., 95(12), p8419-8424(2004).
[7] Sean J. Yoon*, Insook Lee, Jong-Wan Lee1 andByungdu Oh Jpn. J. Appl. Phys. Vol. 40 (2001) 809-812
[8] G. H. Rosenblatt, M. W. Rowe, G. P. Williams, R. T.Williams, and Y. Chen, Phys. Review, 39(14),pp. 10309-10318 (1989).
[9] B. T. Jeffries, R.https://www.51lunwen.org/ Gonzalez, Y. Chen, and G. P.Summers, 25(3) pp. 2077-208 0 (1982).
[10] V. v. Elsbergen, P. K. Bachmann, and T. Juestel,SID Tech. Digest, pp. 220-223 (2000).
[11] M.-S. Lee, Y. Matulevich, J.-S. Choi, S.-K. Kim, J.-H. Kim, S.-S. Suh, D.-S. Zang, and K.-D. Kim, SIDTech. Digest, pp1232-1235(2005).

 

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