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Atomic Force Microscopy-Based Nanolithography on Silicon Using Colloidal Au Nanoparticles As a Nanooxidation Mask Introduction Atomic force microscopy (AFM) lithography has attracted much attention for its nanometer-scale surface structuring capability. The basic strategy of AFM lithography is to utilize the spatially localized force or electric field generated by the AFM tip to induce a physical or chemical change on surfaces. Mamin et al.,1 Bouchiat and Esteve,2 and others have demonstrated the formation of nanopits and grooves on soft polymer surfaces by AFMbased mechanical indentation or scratching. arrays on solid surfaces. These arrays can be used as the coulomb islands in the study of room-temperature singleelectron tunneling,13,14 as nanoelectrodes for electrochemical studies,15 as active substrates in surface-enhanced Raman scattering (SERS),16 etc. Recently, Ahmed et al. reported that the gold colloidal nanoparticles could be utilized as reactive ion etching (RIE) masks for the fabrication of silicon nanopillars.17 The diameter of a pillar is directly determined by the nanoparticle size. These investigators have succeeded in making nanopillars as small as 5 nm in diameter. In this letter, we present a novel use of colloidal gold nanoparticles inAFMnanolithography. The nanoparticles are immobilized on a mercaptopropyltriethoxysilane (MPTS)-modified silicon surface via Au-S chemical bonding and are exploited as the lithographic mask to prevent the covered area from AFM tip-induced nanooxidation of MPTS and silicon. By combining this approach with the wet chemical etching, we demonstrate the feasibility of fabricating large-area silicon nanocolumns with a simple one-raster scanning of an AFM tip.本论文由英语论文网提供整理，提供论文代写，英语论文代写，代写论文，代写英语论文，代写留学生论文，代写英文论文，留学生论文代写相关核心关键词搜索。