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ent approaches, where the anneal was otherwise alsocarried out in nitrogen, but a short pulse of air of a givenconcentration was introduced either as a separate step before asubstrate reached its peak temperature, or at the peaktemperature, then purged off before the panel was cooled.

Devices with annealed phosphor films were then furtherprocessed with depositions for AlN upper dielectric and ITOtransparent electrode. Luminance, efficiency and life tests wereperformed at 240Hz or light pulses unless noted otherwise.Powder X-ray diffraction (XRD) patterns of thin films werecollected on a Bruker AXS D8 Discover equipped with an areadetector.

3. Results and Discussion
3.1 Phosphor Formation
Sputter-deposited films of BaAl2S4:Eu were optically clear,unlike the normally dark (metal-rich or sulfur-deficient) filmsdeposited by E-beam evaporation. This difference is believedthe basis for some differences in certain processing steps andproperties between sputtered and E-beam evaporatedthioalluminate phosphor films. For example, the sputter-deposited films can be simply annealed in pure nitrogen to forma transparent and stoichiometric phosphor, while the E-beamevaporated films would have to be annealed in air for goodperformance .

In the air-pulse anneal process for sputtered films, the topsurface of the phosphor film became partially oxidized, theextent of which depends on many factors such as the airconcentration, pulse time and temperature. The bulk of thephosphor layer appeared to become doped by oxygen as well,where a desirable slight blue shift in EL color was observed aswill be discussed below. However, air-pulse anneal tends toreduce EL luminance.

Two different phases of BaAl2S4:Eu films have been reportedpreviously by coworkers at iFire [7,8], among other phases athigher aluminum concentrations such as BaAl4S7.

References

[1] N. Miura, M. Kawanishi, H. Matsumoto and R. Nakano, Jpn. J. Appl. Phys. 38, L1291(1999).
[2] Y. Xin, T. Hunt, and J. Acchione, 2004 SID International Symposium Digest of Technical Papers, pp 1138-1141.
[3] Y. Xin, Y. Xu and J. Acchione, Electro-luminescence Conference 2004, Toronto, Canada, pp 84-87.
[4] A. Kosyachkov, 2003 SID International Symposium Digest of Technical Papers, pp 1118-1119.
[5] A. Kosyachkov, 2005 SID International Symposium Digest of Technical Papers, https://www.51lunwen.org/liuxuelunwendx/pp 120-121.
[6] J. Acchione and A. Kosyachkov, Proc. International Display Works/Asia Display 2005, pp 1623-1624.
[7] J. A. R. Stiles and M. Kamkar, US Patent Application no. 11/196,163 (2006).
[8] M. Peter, M. Westcott and V. Pugliese, Electroluminescence Conference 2004, Toronto, Canada, pp 351-354.

 

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